GaSb/GaAs quantum dot systems: In situ synchrotron radiation x-ray photoelectron spectroscopy study
Artikel i vetenskaplig tidskrift, 2005

GaSb/GaAs quantum dot systems are fabricated using MBE under various growth modes. The as-grown samples are studied with in situ synchrotron radiation XPS covering the As 3d, Sb 4d and Ga 3d core levels and the valence band region. The XPS spectra show dramatic changes with the growth modes, reflecting changes in the local electronic structure and chemical environments of the surface and interface atoms in both quantum dots and wetting layer. A quantum dot specific contribution near the valence band maximum is identified and related to the hole accumulation process. Local valence band offsets measured in the GaSb/GaAs systems evolve over the interface region and depend on the growth modes, which adds another degree of freedom to band engineering on the nanoscale.

Författare

V. N. Strocov

Universität Augsburg

Paul Scherrer Institut

G. E. Cirlin

Russian Academy of Sciences

Max Planck-institutet

J. Sadowski

Lunds universitet

Institute of Physics of the Polish Academy of Sciences

Janusz Kanski

Göteborgs universitet

R. Claessen

Universität Augsburg

Nanotechnology

0957-4484 (ISSN) 1361-6528 (eISSN)

Vol. 16 8 1326-1334

Ämneskategorier

Annan teknik

DOI

10.1088/0957-4484/16/8/058