Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epiotaxy
Artikel i vetenskaplig tidskrift, 2007

GaN layers of 280 nm thick were grown on sapphire, silicon (1 1 1) and GaN template by plasma assisted molecular beam epitaxy. From atomic force microscopy and high-resolution X-ray diffraction, it was found that GaN grown on sapphire and template gave smooth surface (RMS less then 0.5 nm) and very high crystalline quality (FWHM of (0 0 0 2) scan on sapphire only 48 arcsec). However, GaN growth on Si (1 1 1) provided rough surface and poor crystalline quality. The GaN/AlN multiple quantum well structures were grown on sapphire and template. Intersubband absorption spectra from Fourier transform infrared spectroscopy indicated that layers on GaN templates had better performances than on sapphire substrates.

B1. Nitrides

A1. Atomic force microscopy

A1. High-resolution X-ray diffraction

A3. Molecular beam epitaxy

A1. Reflection high-energy electron diffraction

Författare

Xinju Liu

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Peter Jänes

Photonics and Quantum Electronics

Petter Holmström

Photonics and Quantum Electronics

Thomas Aggerstam

Kungliga Tekniska Högskolan (KTH)

Sebastian Lourdudoss

Kungliga Tekniska Högskolan (KTH)

Lars Thylén

Photonics and Quantum Electronics

Thorvald Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Journal of Crystal Growth

0022-0248 (ISSN)

Vol. 300 1 79-

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1016/j.jcrysgro.2006.10.241

Mer information

Senast uppdaterat

2018-02-26