Growth of GaN and GaN/AlN multiple quantum wells on sapphire, Si and GaN template by molecular beam epiotaxy
Journal article, 2007
B1. Nitrides
A1. Atomic force microscopy
A1. High-resolution X-ray diffraction
A3. Molecular beam epitaxy
A1. Reflection high-energy electron diffraction
Author
Xinju Liu
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Peter Jänes
Photonics and Quantum Electronics
Petter Holmström
Photonics and Quantum Electronics
Thomas Aggerstam
Royal Institute of Technology (KTH)
Sebastian Lourdudoss
Royal Institute of Technology (KTH)
Lars Thylén
Photonics and Quantum Electronics
Thorvald Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Journal of Crystal Growth
0022-0248 (ISSN)
Vol. 300 1 79-82Subject Categories
Condensed Matter Physics
DOI
10.1016/j.jcrysgro.2006.10.241