Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN
Artikel i vetenskaplig tidskrift, 2007

Up to 10 monolayers of Al were deposited on Si (1 1 1) surfaces at low (450 °C) and high (640 °C) temperatures before the molecular beam epitaxy growth of GaN. The influence of the Al monolayers on the overall GaN epitaxial layers was investigated by reflection high-energy electron diffraction, atomic force microscopy, high-resolution X-ray diffraction and transmission electron microscopy. At high-temperature deposition, 1.3 monolayer Al gave the smoothest GaN surface and best crystalline quality. At the low temperature, only 0.8 ML provided the same GaN quality.

A1. High-resolution X-ray diffraction

B1. Nitrides

A1. Reflection high-energy electron diffraction

A1. Atomic force microscopy

A3. Molecular beam epitaxy

Författare

Xinju Liu

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

H.F. Liu

Nanyang Technological University

A. Uddin

Nanyang Technological University

Thorvald Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Journal of Crystal Growth

0022-0248 (ISSN)

Vol. 300 1 114-

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1016/j.jcrysgro.2006.11.032