Aluminum monolayers on Si (1 1 1) for MBE-growth of GaN
Journal article, 2007
A1. High-resolution X-ray diffraction
B1. Nitrides
A1. Reflection high-energy electron diffraction
A1. Atomic force microscopy
A3. Molecular beam epitaxy
Author
Xinju Liu
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
H.F. Liu
Nanyang Technological University
A. Uddin
Nanyang Technological University
Thorvald Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Journal of Crystal Growth
0022-0248 (ISSN)
Vol. 300 1 114-117Subject Categories
Condensed Matter Physics
DOI
10.1016/j.jcrysgro.2006.11.032