Resistance in sub-m size GaAs lines
Artikel i vetenskaplig tidskrift, 1987

The electrical resistance in GaAs submicron mesa lines has been studied as a function of the line width. Using molecular beam epitaxy two types of conducting layers were made: an n+-layer and a two-dimensional electron gas confined to an (AlGa)As/GaAs heterostructure. Processing of the lines was made by photolithography, electron beam lithography and ion etching. Resistance data at 77 K and 300 K are discussed for line widths in the interval 0.2 to 5 m. A size dependent conduction was found and interpreted in terms of geometry induced limitation of the effective conducting path

size effect

integrated circuit technology

one-dimensional conductivity

III-V semiconductors

gallium arsenide

electron beam lithography

sputter etching

photolithography

electric resistance

Författare

A. Rouhani-Kalleh

Institutionen för fysik

Thorvald Andersson

Institutionen för fysik

Bengt Nilsson

Institutionen för fysik

J. Westin

Institutionen för fysik

Superlattices and Microstructures

0749-6036 (ISSN) 1096-3677 (eISSN)

Vol. 3 4 417-419

Styrkeområden

Nanovetenskap och nanoteknik

Materialvetenskap

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1016/0749-6036(87)90216-3