Resistance in sub-m size GaAs lines
Journal article, 1987
The electrical resistance in GaAs submicron mesa lines has been studied as a function of the line width. Using molecular beam epitaxy two types of conducting layers were made: an n+-layer and a two-dimensional electron gas confined to an (AlGa)As/GaAs heterostructure. Processing of the lines was made by photolithography, electron beam lithography and ion etching. Resistance data at 77 K and 300 K are discussed for line widths in the interval 0.2 to 5 m. A size dependent conduction was found and interpreted in terms of geometry induced limitation of the effective conducting path
size effect
integrated circuit technology
one-dimensional conductivity
III-V semiconductors
gallium arsenide
electron beam lithography
sputter etching
photolithography
electric resistance
Author
A. Rouhani-Kalleh
Department of Physics
Thorvald Andersson
Department of Physics
Bengt Nilsson
Department of Physics
J. Westin
Department of Physics
Superlattices and Microstructures
0749-6036 (ISSN) 1096-3677 (eISSN)
Vol. 3 4 417-419Areas of Advance
Nanoscience and Nanotechnology
Materials Science
Subject Categories
Condensed Matter Physics
DOI
10.1016/0749-6036(87)90216-3