Waveguides for nitride based quantum cascade lasers
Artikel i vetenskaplig tidskrift, 2011

Waveguide designs for AlGaN-based near-infrared quantum cascade lasers are investigated using a finite-difference method mode solver. Because of the negligibly small refractive index difference between the AlN/GaN/AlGaN gain region and the surrounding AlGaN current injection and extraction layers, a low refractive index substrate (sapphire) and a low refractive index dielectric (SiO2) are used for vertical confinement of the optical field. A ridge waveguide with an off-center contact metallization is used for lateral confinement. The off-center contact allows for the propagation of a TM mode with low metal induced loss and sufficient optical confinement in the gain region. A viable waveguide design with a metal-induced loss of 6.1 cm-1 and a confinement factor of 0.52 is demonstrated.

waveguide

near infrared

quantum cascade laser

nitrides

Författare

Martin Stattin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Kristian Berland

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

Per Hyldgaard

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Thorvald Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Physica Status Solidi (C) Current Topics in Solid State Physics

1862-6351 (ISSN) 1610-1642 (eISSN)

Vol. 8 2357-2359

Styrkeområden

Informations- och kommunikationsteknik

Ämneskategorier

Telekommunikation

DOI

10.1002/pssc.201000987