Waveguides for nitride based quantum cascade lasers
Journal article, 2011

Waveguide designs for AlGaN-based near-infrared quantum cascade lasers are investigated using a finite-difference method mode solver. Because of the negligibly small refractive index difference between the AlN/GaN/AlGaN gain region and the surrounding AlGaN current injection and extraction layers, a low refractive index substrate (sapphire) and a low refractive index dielectric (SiO2) are used for vertical confinement of the optical field. A ridge waveguide with an off-center contact metallization is used for lateral confinement. The off-center contact allows for the propagation of a TM mode with low metal induced loss and sufficient optical confinement in the gain region. A viable waveguide design with a metal-induced loss of 6.1 cm-1 and a confinement factor of 0.52 is demonstrated.

waveguide

near infrared

quantum cascade laser

nitrides

Author

Martin Stattin

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Kristian Berland

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Per Hyldgaard

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Thorvald Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Physica Status Solidi (C) Current Topics in Solid State Physics

1862-6351 (ISSN) 1610-1642 (eISSN)

Vol. 8 7-8 2357-2359

Areas of Advance

Information and Communication Technology

Subject Categories

Telecommunications

DOI

10.1002/pssc.201000987

More information

Created

10/6/2017