Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology
Artikel i vetenskaplig tidskrift, 2012

We have used models based on the effective-mass approximation and Schrodinger-Poisson to design AlN/GaN multiple quantum well structures for intersubband transitions between two or three energy levels. The structures were realized by molecular beam epitaxy and the surface morphology and structural quality were investigated. We also investigated GaN waveguides that were fabricated using standard cleanroom techniques. Our work is focused on the various challenges associated to the fabrication of quantum cascade lasers based on group III-nitrides. These challenges are discussed in the light of our results.

multiple-quantum wells

absorption

cascade lasers

mu-m

Författare

Tommy Ive

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Kristian Berland

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

Martin Stattin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Fredrik Fälth

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Per Hyldgaard

Chalmers, Mikroteknologi och nanovetenskap (MC2), Elektronikmaterial och system

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Thorvald Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Japanese Journal of Applied Physics

0021-4922 (ISSN)

Vol. 51 Article Number: 01AG07 -

Styrkeområden

Informations- och kommunikationsteknik

Materialvetenskap

Ämneskategorier

Telekommunikation

Infrastruktur

C3SE (Chalmers Centre for Computational Science and Engineering)

Drivkrafter

Innovation och entreprenörskap

DOI

10.1143/JJAP.51.01AG07