Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology
Journal article, 2012

We have used models based on the effective-mass approximation and Schrodinger-Poisson to design AlN/GaN multiple quantum well structures for intersubband transitions between two or three energy levels. The structures were realized by molecular beam epitaxy and the surface morphology and structural quality were investigated. We also investigated GaN waveguides that were fabricated using standard cleanroom techniques. Our work is focused on the various challenges associated to the fabrication of quantum cascade lasers based on group III-nitrides. These challenges are discussed in the light of our results.

multiple-quantum wells

absorption

cascade lasers

mu-m

Author

Tommy Ive

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Kristian Berland

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Martin Stattin

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Fredrik Fälth

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Per Hyldgaard

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Thorvald Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Japanese Journal of Applied Physics

0021-4922 (ISSN)

Vol. 51 1 Article Number: 01AG07 -

Areas of Advance

Information and Communication Technology

Materials Science

Subject Categories

Telecommunications

Infrastructure

C3SE (Chalmers Centre for Computational Science and Engineering)

Driving Forces

Innovation and entrepreneurship

DOI

10.1143/JJAP.51.01AG07

More information

Created

10/7/2017