Fredrik Fälth

Showing 9 publications

2012

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Tommy Ive, Kristian Berland, Martin Stattin et al
Japanese Journal of Applied Physics. Vol. 51 (1), p. Article Number: 01AG07 -
Journal article
2011

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Thorvald Andersson, Kristian Berland, Rashid Farivar et al
ISPlasma 2011, March 6-9, 2011 Nagoya, Japan
Conference poster
2006

[M]. Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

Fredrik Fälth, Stefan Davidsson, Xinju Liu et al
Thin solid films. Vol. 515, p. 603-
Journal article
2005

Influence of Al/N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Fredrik Fälth, Stefan Davidsson, Xinju Liu et al
applied physics letters. Vol. 87, p. 161901-
Journal article
2005

Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

Xinju Liu, Fredrik Fälth, Thorvald Andersson et al
Journal of Crystal Growth. Vol. 278, p. 397-
Journal article
2005

[J]. Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Stefan Davidsson, Fredrik Fälth, Xinju Liu et al
Journal of applied physics. Vol. 98 (1), p. 16109-
Journal article
2005

Influence of dislocation density on photoluminescence intensity of GaN

Fredrik Fälth, Manjula Gurusinghe, Xinju Liu et al
Journal of crystal growth. Vol. 278, p. 406-
Journal article
2003

Inductively Coupled Plasma Etching of GaN Mesa Structures for Microphotoluminescence

Toshio Kawahara, Fredrik Fälth, Xinju Liu et al
Proceedings of the 2nd IMP3 conference
Paper in proceedings

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