Fredrik Fälth

Publications (9)
Projects (0)

Showing 9 publications

2012

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Tommy Ive, Kristian Berland, Martin Stattin et al

Japanese Journal of Applied Physics. Vol. 51 (1), p. Article Number: 01AG07 -

Journal article

2011

Design and Fabrication of AlN/GaN Heterostructures for Intersubband Technology

Thorvald Andersson, Kristian Berland, Rashid Farivar et al

ISPlasma 2011, March 6-9, 2011 Nagoya, Japan

Conference poster

2006

[M]. Substrate pre-treatment and initial growth: Strategies towards high-quality III-nitride growth on sapphire by molecular beam epitaxy

Fredrik Fälth, Stefan Davidsson, Xinju Liu et al

Thin solid films. Vol. 515, p. 603-

Journal article

2005

Influence of dislocation density on photoluminescence intensity of GaN

Fredrik Fälth, Manjula Gurusinghe, Xinju Liu et al

Journal of crystal growth. Vol. 278, p. 406-

Journal article

2005

[J]. Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy

Stefan Davidsson, Fredrik Fälth, Xinju Liu et al

Journal of applied physics. Vol. 98 (1), p. 16109-

Journal article

2005

Structural and optical properties of GaN/AlN multiple quantum wells for intersubband applications

Xinju Liu, Fredrik Fälth, Thorvald Andersson et al

Journal of Crystal Growth. Vol. 278, p. 397-

Journal article

2005

Influence of Al/N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy

Fredrik Fälth, Stefan Davidsson, Xinju Liu et al

applied physics letters. Vol. 87, p. 161901-

Journal article

2005

Growth, characterization and processing of III-nitride semiconductors

Fredrik Fälth

Doctoral thesis

2003

Inductively Coupled Plasma Etching of GaN Mesa Structures for Microphotoluminescence

Toshio Kawahara, Fredrik Fälth, Xinju Liu et al

Proceedings of the 2nd IMP3 conference

Paper in proceeding

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