[J]. Effect of AlN nucleation layer on the structural properties of bulk GaN grown on sapphire by molecular-beam epitaxy
Journal article, 2005
Author
Stefan Davidsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Fredrik Fälth
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Xinju Liu
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Thorvald Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Journal of applied physics
Vol. 98 1 16109-
Subject Categories
Condensed Matter Physics