Influence of Al/N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy
Journal article, 2005
Author
Fredrik Fälth
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Stefan Davidsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Xinju Liu
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Thorvald Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
applied physics letters
Vol. 87 161901-
Subject Categories
Condensed Matter Physics