Influence of Al/N flux ratio during nucleation layer growth on the structural properties of AlN grown on sapphire by molecular beam epitaxy
Journal article, 2005

Author

Fredrik Fälth

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Stefan Davidsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Xinju Liu

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Thorvald Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

applied physics letters

Vol. 87 161901-

Subject Categories

Condensed Matter Physics

More information

Created

10/8/2017