Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques
Artikel i vetenskaplig tidskrift, 2001

Different types of InGaAs/GaAs deep-etched quantum wire (QWI) structure were successfully fabricated by high-energy electron beam lithography on GaAs(100) surfaces. A selective wet-chemical-etching technique, preceded by chemically assisted ion-beam etching, reduced the controlled lateral dimensions of the wires to ~10 nm due to strong under-etching. Various types of wire in the [011] and [011] crystallographic directions were prepared by the combined etching method. The side-walls of the wires were defined by the selectively etched low index crystallographic planes. A molecular-beam-epitaxy-grown graded InGaAs/GaAs quantum well was realized at the narrow `neck' region of the wires, thus providing the strongest possible lateral confinement of the QWI structure. Consequently, similarly to the selective growth of self-narrowing ridge structures, selective wet-chemical etching induced a controlled self-narrowing of the wire structures. Scanning electron microscopy images of the QWI nanostructures showed smooth side-walls defined by the crystallographic planes. Low-excitation photoluminescence spectroscopy of the structures revealed extremely high quantum efficiency and a size-dependent blue shift as a result of the strong lateral confinement


III-V semiconductors

semiconductor quantum wires

gallium arsenide

indium compounds


Otto Zsebök

Institutionen för mikroelektronik och nanovetenskap

Jan Thordson

Institutionen för mikroelektronik och nanovetenskap

Bengt Nilsson

Institutionen för mikroelektronik och nanovetenskap

Thorvald Andersson

Institutionen för mikroelektronik och nanovetenskap


0957-4484 (ISSN) 1361-6528 (eISSN)

Vol. 12 32-7


Nanovetenskap och nanoteknik



Den kondenserade materiens fysik



Mer information