Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques
Journal article, 2001

Different types of InGaAs/GaAs deep-etched quantum wire (QWI) structure were successfully fabricated by high-energy electron beam lithography on GaAs(100) surfaces. A selective wet-chemical-etching technique, preceded by chemically assisted ion-beam etching, reduced the controlled lateral dimensions of the wires to ~10 nm due to strong under-etching. Various types of wire in the [011] and [011] crystallographic directions were prepared by the combined etching method. The side-walls of the wires were defined by the selectively etched low index crystallographic planes. A molecular-beam-epitaxy-grown graded InGaAs/GaAs quantum well was realized at the narrow `neck' region of the wires, thus providing the strongest possible lateral confinement of the QWI structure. Consequently, similarly to the selective growth of self-narrowing ridge structures, selective wet-chemical etching induced a controlled self-narrowing of the wire structures. Scanning electron microscopy images of the QWI nanostructures showed smooth side-walls defined by the crystallographic planes. Low-excitation photoluminescence spectroscopy of the structures revealed extremely high quantum efficiency and a size-dependent blue shift as a result of the strong lateral confinement


III-V semiconductors

semiconductor quantum wires

gallium arsenide

indium compounds


Otto Zsebök

Department of Microelectronics and Nanoscience

Jan Thordson

Department of Microelectronics and Nanoscience

Bengt Nilsson

Department of Microelectronics and Nanoscience

Thorvald Andersson

Department of Microelectronics and Nanoscience


0957-4484 (ISSN) 1361-6528 (eISSN)

Vol. 12 32-7

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Materials Science

Subject Categories

Condensed Matter Physics



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