Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques
Journal article, 2001
etching
III-V semiconductors
semiconductor quantum wires
gallium arsenide
indium compounds
Author
Otto Zsebök
Department of Microelectronics and Nanoscience
Jan Thordson
Department of Microelectronics and Nanoscience
Bengt Nilsson
Department of Microelectronics and Nanoscience
Thorvald Andersson
Department of Microelectronics and Nanoscience
Nanotechnology
0957-4484 (ISSN) 1361-6528 (eISSN)
Vol. 12 32-7Areas of Advance
Nanoscience and Nanotechnology
Materials Science
Subject Categories
Condensed Matter Physics
DOI
10.1088/0957-4484/12/1/307