Intersubband energies in Al1-yInyN/Ga1-xInxN heterostructures with lattice constant close to aGaN
Artikel i vetenskaplig tidskrift, 2012

We have studied the conduction band profile and the intersubband transition energy, E-12, of Al1-yInyN/Ga1-xInxN quantum well structures. We have considered how material parameters such as non-parabolicity and the uncertainty in the bowing parameter affect E-12 and the corresponding wavelength, lambda(12). The calculations include strain and cover the transition range from telecommunication wavelengths (1.55 mu m) to the mid-infrared (similar to 10 mu m). Our results show that the transition energies of strain-free Al1-yInyN/Ga1-xInxN quantum well structures, which are lattice-matched to GaN (y = 17.7%, x = 0), resulted in wavelengths above similar to 2 mu m. To reach shorter wavelengths, we explored structures with other indium concentrations but maintaining a small mismatch to GaN. For similar to 1% lattice mismatch the wavelength lambda(12) could be reduced to less than 1.55 mu m. The results serve as a starting point for designing and epitaxial growth of photonic intersubband structures.

AlN

GaN

Intersubband

devices

mu-m

wurtzite semiconductors

molecular-beam epitaxy

laser-diodes

GaInN

Telecommunication wavelength

wavelengths

polarization

AlInN

Strain

absorption

growth

multiple-quantum wells

Författare

H. Akabli

Universite Cadi Ayyad

A. Almaggoussi

Universite Cadi Ayyad

A. Abounadi

Universite Cadi Ayyad

A. Rajira

Universite Cadi Ayyad

Kristian Berland

Chalmers, Teknisk fysik, Elektronikmaterial och system

Thorvald Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Superlattices and Microstructures

0749-6036 (ISSN) 1096-3677 (eISSN)

Vol. 52 1 70-77

Ämneskategorier

Fysik

DOI

10.1016/j.spmi.2012.04.012