Intersubband energies in Al1-yInyN/Ga1-xInxN heterostructures with lattice constant close to aGaN
Journal article, 2012
We have studied the conduction band profile and the intersubband transition energy, E-12, of Al1-yInyN/Ga1-xInxN quantum well structures. We have considered how material parameters such as non-parabolicity and the uncertainty in the bowing parameter affect E-12 and the corresponding wavelength, lambda(12). The calculations include strain and cover the transition range from telecommunication wavelengths (1.55 mu m) to the mid-infrared (similar to 10 mu m). Our results show that the transition energies of strain-free Al1-yInyN/Ga1-xInxN quantum well structures, which are lattice-matched to GaN (y = 17.7%, x = 0), resulted in wavelengths above similar to 2 mu m. To reach shorter wavelengths, we explored structures with other indium concentrations but maintaining a small mismatch to GaN. For similar to 1% lattice mismatch the wavelength lambda(12) could be reduced to less than 1.55 mu m. The results serve as a starting point for designing and epitaxial growth of photonic intersubband structures.
AlN
GaN
Intersubband
devices
mu-m
wurtzite semiconductors
molecular-beam epitaxy
laser-diodes
GaInN
Telecommunication wavelength
wavelengths
polarization
AlInN
Strain
absorption
growth
multiple-quantum wells
Author
H. Akabli
Cadi Ayyad University
A. Almaggoussi
Cadi Ayyad University
A. Abounadi
Cadi Ayyad University
A. Rajira
Cadi Ayyad University
Kristian Berland
Chalmers, Applied Physics, Electronics Material and Systems
Thorvald Andersson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Superlattices and Microstructures
0749-6036 (ISSN) 1096-3677 (eISSN)
Vol. 52 1 70-77Subject Categories
Physical Sciences
DOI
10.1016/j.spmi.2012.04.012