Novel InGaPBi single crystal grown by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2015

InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substrates by molecular beam epitaxy. Rutherford backscattering spectrometry confirms that the majority of Bi atoms are located at substitutional lattice sites. The films exhibit good surface, structural, and interface quality, and their strains can be tuned from tensile to compressive by increasing the Bi content. InBi LO and GaBi LO vibrational modes in Raman spectroscopy were observed, and their intensities increased with Bi concentration. A weak photoluminescence signal was observed at 1.78 eV at room temperature for the sample with a Bi content of 0.5%.

Författare

L. Yue

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

P. Wang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

K. Wang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

X. Y. Wu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

W. W. Pan

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. Li

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. X. Song

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Yi Gu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Q. Gong

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

J. Q. Ning

The University of Hong Kong

S. Xu

The University of Hong Kong

Applied Physics Express

1882-0778 (ISSN)

Vol. 8 Art. no. 041201-

Ämneskategorier

Annan teknik

Den kondenserade materiens fysik

DOI

10.7567/apex.8.041201