Nanoscale distribution of Bi atoms in InP1−xBix
Artikel i vetenskaplig tidskrift, 2017

The nanoscale distribution of Bi in InPBi is determined by atom probe tomography and transmission electron microscopy. The distribution of Bi atoms is not uniform both along the growth direction and within the film plane. A statistically high Bi-content region is observed at the bottom of the InPBi layer close to the InPBi/InP interface. Bi-rich V-shaped walls on the (-111) and (1-11) planes close to the InPBi/InP interface and quasi-periodic Bi-rich nanowalls in the (1-10) plane with a periodicity of about 100 nm are observed. A growth model is proposed to explain the formation of these unique Bi-related nanoscale features. These features can significantly affect the deep levels of the InPBi epilayer. The regions in the InPBi layer with or without these Bi-related nanostructures exhibit different optical properties.

Författare

L Zhang

Chinese Academy of Sciences

M Wu

Friedrich-Alexander-Universität Erlangen Nurnberg (FAU)

Paul Drude Institut fur Festkorperelektronik

X Chen

Chinese Academy of Sciences

X Wu

Chinese Academy of Sciences

E Spiecker

Friedrich-Alexander-Universität Erlangen Nurnberg (FAU)

Y Song

Chinese Academy of Sciences

W Pan

Chinese Academy of Sciences

Y Li

Chinese Academy of Sciences

L Yue

Chinese Academy of Sciences

J Shao

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Scientific Reports

2045-2322 (ISSN)

Vol. 7 1 12278- 12278

Ämneskategorier

Nanoteknik

DOI

10.1038/s41598-017-12075-2

PubMed

28947809

Mer information

Senast uppdaterat

2018-05-30