Effects of growth conditions on optical quality and surface morphology of InGaAsBi
Artikel i vetenskaplig tidskrift, 2018

The effects of Bi flux and pressure of AsH3 on Bi incorporation, surface morphology and optical properties of In-GaAsBi grown by gas source molecular beam epitaxy are studied. It is found that using relatively low pressure of AsH 3 and high Bi flux can strengthen the effect on the incorporation of Bi and increase its content linearly with Bi flux until it nearly reaches a saturation value. The result from Rutherford backscattering spectroscopy (RBS) confirms that the Bi incorporation can increase up to 1.13%. By adjusting Bi and As flux, we could improve the surface morphology of InGaAsBi sample. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InGaAs bandgap.

gas source molecular beam epitaxy


compound semiconductor


Jia Kai Li

Chinese Academy of Sciences

L. K. Ai

Chinese Academy of Sciences

Ming Qi

Chinese Academy of Sciences

An Hui Xu

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Chinese Physics B

1674-1056 (ISSN) 20583834 (eISSN)

Vol. 27 4 048101


Astronomi, astrofysik och kosmologi

Atom- och molekylfysik och optik

Den kondenserade materiens fysik



Mer information

Senast uppdaterat