Effect of Ridge Width on the Lasing Characteristics of Triangular and Rectangular InAs/In0.53Ga0.47As Quantum Well Lasers
Artikel i vetenskaplig tidskrift, 2022

The lasing characteristics of InP-based InAs/In0.53Ga0.47As quantum well (QW) lasers with different ridge widths are investigated. Two groups of lasers are grown for comparison, one with active triangular QW regions and the other with rectangular QW regions. Their output powers, characteristic temperatures (T0), external differential quantum efficiencies (ηd) and junction temperatures (Tj) are analyzed and compared. The parameter of ridge width is found to play an important role in the performance of the lasers. In triangular QW lasers, by broadening the ridge width from 8 to 12 μm, output power and ηd of the lasers are decreased for the temperature range of 100–320 K due to heating effect. But by broadening the ridge width from 8 to 100 μm in rectangular QW lasers, output power has about 3.5 time increase at 100 K and ηd also has a little increase for temperatures from 100 to 180 K due to much larger emission area and much faster heat dissipation. Tj, the real temperature of the active region, is also found to have accelerated increase at high injection current and heat sink temperature. Besides, compared to the rectangular QW laser of the same ridge width, the improved thermal performance of triangular QW laser is also demonstrated.

ridge width effect

lasing characteristics

InAs quantum wells

rectangular quantum wells

triangular quantum wells


Zhejing Jiao

Shanghai University of Electric Power

Yi Gu

Chinese Academy of Sciences

Yonggang Zhang

Chinese Academy of Sciences

Anduo Hu

Shanghai University of Electric Power

Qian Gong

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Tao Li

Chinese Academy of Sciences

Xue Li

Chinese Academy of Sciences

Frontiers in Materials

22968016 (eISSN)

Vol. 9 833777


Atom- och molekylfysik och optik

Annan elektroteknik och elektronik



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