Bismuth-induced band-tail states in GaAsBi probed by photoluminescence
Artikel i vetenskaplig tidskrift, 2019

Band-tail states in semiconductors reflect the effects of material growth and/or treatment, affect the performance of optoelectronic applications, and are hence a well-concerned issue. Dilute-Bi GaAs is considered very competitive though the role of Bi is yet to be well clarified. We in this letter investigate the effect of Bi incorporation on the band-tail states in GaAs 1−x Bi x by excitation power- and magnetic field-dependent photoluminescence (PL) measurements at low temperatures. Three PL features are identified from a broad PL peak, which blue-shift monotonically with the increase in excitation power. None of the PL features correlate with single Bi-content free-exciton recombination, and band-tail filling rather than the donor-acceptor pair process is responsible for the power-induced blueshift. The density of band-tail states gets enhanced with the increase in the Bi incorporation level and affects the determination of Bi-induced bandgap reduction. The results indicate that joint analysis of excitation- and magneto-PL may serve as a good probe for band-tail states in semiconductors.


Bing Yan

Shanghai Normal University

Chinese Academy of Sciences

X Chen

Chinese Academy of Sciences

Liangqing Zhu

East China Normal University

Chinese Academy of Sciences

W. W. Pan

Chinese Academy of Sciences

L Wang

Chinese Academy of Sciences

L. Yue

Chinese Academy of Sciences

Xiaolei Zhang

Chinese Academy of Sciences

Li Han

Chinese Academy of Sciences

Feng Liu

Shanghai Normal University

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Chinese Academy of Sciences

J. Shao

Chinese Academy of Sciences

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 114 5 052104


Atom- och molekylfysik och optik

Annan fysik

Den kondenserade materiens fysik



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