Novel type II InGaAs/GaAsBi quantum well for longer wavelength emission
Artikel i vetenskaplig tidskrift, 2017

We propose a new type II InGaAs/GaAsBi quantum well structure to extend light emission wavelength on GaAs and demonstrate the effect experimentally. Type II InGaAs/GaAsBi QWs were grown using molecular beam epitaxy. Room temperature photoluminescence confirms wavelength extension to 1230 nm, 82 and 208 nm longer than that of the type I GaAsBi and InGaAs QW with the same Bi or In content, respectively. The PL intensity is enhanced by more than ten times than the GaAsBi QW. Our results show that the type II dilute bismide QW has potentials for making telecom lasers on GaAs.

Wavelength extension

Dilute bismides

InGaAs/GaAsBi type II QW

Structural properties

Optical properties

Författare

Li Yue

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

yuxin song

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

X Chen

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Q Chen

Chinese Academy of Sciences

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Wenwu Pan

Chinese Academy of Sciences

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Xiaoyan Wu

Chinese Academy of Sciences

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Juanjuan Liu

Chinese Academy of Sciences

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Liyao Zhang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Jun Shao

Shanghai Institute of Technical Physics Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Journal of Alloys and Compounds

0925-8388 (ISSN)

Vol. 695 753-759

Ämneskategorier

Fysik

DOI

10.1016/j.jallcom.2016.07.300