Structural and Optical Properties of High Bi Content GaSbBi Films Grown by Molecular Beam Epitaxy
Paper i proceeding, 2016

GaSb1-xBix thin films with 0 <= x <= 13% were grown by molecular beam epitaxy. The Bi content, lattice expansion and crystal structure were investigated by Rutherford backscattering spectroscopy, X-ray diffraction and transmission electron microscopy. Photoluminescence spectra of the GaSb1-xBix alloys with various Bi contents were studied at 77 K. The bandgap energy of GaSb1-xBix is decreased effectively as Bi content increasing. The PL peak energy of the 13% Bi content GaSb1-xBix is extended to 2.43 mu m, indicating that GaSb1-xBix alloys has potentials in mid-infrared applications.

photoluminescence

GaSbBi

dilute bismide

molecular beam epitaxy

Författare

L Yue

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y Zhang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

F Zhang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

L Wang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y Zhuzhong

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

J. J. Liu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

The 43rd International Symposium on Compound Semiconductors (ISCS), the 2016 Compound Semiconductor Week (CSW2016)

7528861-

Ämneskategorier

Fysik

DOI

10.1109/ICIPRM.2016.7528861

ISBN

978-150901964-9