Structural and optical properties of GaSbBi/GaSb quantum wells [Invited]
Artikel i vetenskaplig tidskrift, 2018

GaSbBi/GaSb quantum wells (QWs) with Bi content up to 10.1% were grown using molecular beam epitaxy. High crystalline quality and clear interfaces were confirmed by high resolution transmission electron microscopy. The Bi distribution was investigated using energy dispersive X-ray spectroscopy. Room temperature photoluminescence (PL) reveals that the peak energy redshifts at a rate of 32 meV/Bi%, consistent with the theoretical predication using the 8-band kp model. From the temperature dependent PL, it was found that the temperature-insensitivity of the transition from the GaSbBi QW improved with increasing Bi content.

Författare

L. Yue

Chinese Academy of Sciences

X Chen

Chinese Academy of Sciences

Yanchao Zhang

ShanghaiTech University

Chinese Academy of Sciences

J. Kopaczek

Wrocław University of Science and Technology

Jun Shao

Chinese Academy of Sciences

Marta Gladysiewicz

Wrocław University of Science and Technology

R Kudrawiec

Wrocław University of Science and Technology

Xin Ou

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Chinese Academy of Sciences

Optical Materials Express

2159-3930 (ISSN)

Vol. 8 4 893-900

Ämneskategorier

Atom- och molekylfysik och optik

Annan fysik

Den kondenserade materiens fysik

DOI

10.1364/OME.8.000893

Mer information

Senast uppdaterat

2018-12-27