Structural and optical properties of GaSbBi/GaSb quantum wells [Invited]
Artikel i vetenskaplig tidskrift, 2018

GaSbBi/GaSb quantum wells (QWs) with Bi content up to 10.1% were grown using molecular beam epitaxy. High crystalline quality and clear interfaces were confirmed by high resolution transmission electron microscopy. The Bi distribution was investigated using energy dispersive X-ray spectroscopy. Room temperature photoluminescence (PL) reveals that the peak energy redshifts at a rate of 32 meV/Bi%, consistent with the theoretical predication using the 8-band kp model. From the temperature dependent PL, it was found that the temperature-insensitivity of the transition from the GaSbBi QW improved with increasing Bi content.


L. Yue

Chinese Academy of Sciences

X Chen

Chinese Academy of Sciences

Yanchao Zhang

ShanghaiTech University

Chinese Academy of Sciences

J. Kopaczek

Politechnika Wrocławska

Jun Shao

Chinese Academy of Sciences

Marta Gladysiewicz

Politechnika Wrocławska

R Kudrawiec

Politechnika Wrocławska

Xin Ou

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Chinese Academy of Sciences

Optical Materials Express

2159-3930 (ISSN)

Vol. 8 4 893-900


Atom- och molekylfysik och optik

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