Structural and optical properties of GaSbBi/GaSb quantum wells [Invited]
Artikel i vetenskaplig tidskrift, 2018
GaSbBi/GaSb quantum wells (QWs) with Bi content up to 10.1% were grown using molecular beam epitaxy. High crystalline quality and clear interfaces were confirmed by high resolution transmission electron microscopy. The Bi distribution was investigated using energy dispersive X-ray spectroscopy. Room temperature photoluminescence (PL) reveals that the peak energy redshifts at a rate of 32 meV/Bi%, consistent with the theoretical predication using the 8-band kp model. From the temperature dependent PL, it was found that the temperature-insensitivity of the transition from the GaSbBi QW improved with increasing Bi content.
Författare
L. Yue
Chinese Academy of Sciences
X Chen
Chinese Academy of Sciences
Yanchao Zhang
Chinese Academy of Sciences
ShanghaiTech University
J. Kopaczek
Politechnika Wrocławska
Jun Shao
Chinese Academy of Sciences
Marta Gladysiewicz
Politechnika Wrocławska
R Kudrawiec
Politechnika Wrocławska
Xin Ou
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Chinese Academy of Sciences
Optical Materials Express
21593930 (eISSN)
Vol. 8 4 893-900Ämneskategorier
Atom- och molekylfysik och optik
Annan fysik
Den kondenserade materiens fysik
DOI
10.1364/OME.8.000893