Structural and optical properties of GaSbBi/GaSb quantum wells [Invited]
Journal article, 2018
GaSbBi/GaSb quantum wells (QWs) with Bi content up to 10.1% were grown using molecular beam epitaxy. High crystalline quality and clear interfaces were confirmed by high resolution transmission electron microscopy. The Bi distribution was investigated using energy dispersive X-ray spectroscopy. Room temperature photoluminescence (PL) reveals that the peak energy redshifts at a rate of 32 meV/Bi%, consistent with the theoretical predication using the 8-band kp model. From the temperature dependent PL, it was found that the temperature-insensitivity of the transition from the GaSbBi QW improved with increasing Bi content.
Author
L. Yue
Chinese Academy of Sciences
X Chen
Chinese Academy of Sciences
Yanchao Zhang
Chinese Academy of Sciences
ShanghaiTech University
J. Kopaczek
Wrocław University of Science and Technology
Jun Shao
Chinese Academy of Sciences
Marta Gladysiewicz
Wrocław University of Science and Technology
R Kudrawiec
Wrocław University of Science and Technology
Xin Ou
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Chinese Academy of Sciences
Optical Materials Express
21593930 (eISSN)
Vol. 8 4 893-900Subject Categories (SSIF 2011)
Atom and Molecular Physics and Optics
Other Physics Topics
Condensed Matter Physics
DOI
10.1364/OME.8.000893