Dipole formation and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy
Paper i proceeding, 2016

Författare

W Pan

L Zhu

L Zhang

Y Li

P. Wang

X Wu

F Zhang

J Shao

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

7th International Workshop on Bismuth Containing Semiconductors, Shanghai, China, July 24th-27th, 2016

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2017-10-07