Dipole formation and band bending of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy
Paper in proceeding, 2016
Author
W Pan
L Zhu
L Zhang
Y Li
P. Wang
X Wu
F Zhang
J Shao
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
7th International Workshop on Bismuth Containing Semiconductors, Shanghai, China, July 24th-27th, 2016
Subject Categories
Physical Sciences