Continuous wave operation of gaasbi microdisk lasers at room temperature with large wavelengths ranging from 1.27 to 1.41 μm
Artikel i vetenskaplig tidskrift, 2019
Submicron-meter size GaAsBi disk resonators were fabricated with the GaAsBi/GaAs single-quantum-well (QW)-structure grown by molecular beam epitaxy. The GaAsBi/GaAs QW revealed very broad photoluminescence signals in the wavelength range of 1100–1400 nm at 300 K. The 750 nm diameter and 220 nm thick disk resonators were optically pumped and exhibited lasing characteristics with continuous wave operation at room temperature. To our knowledge, it is the first demonstration of a lasing wavelength longer than 1.3 μm with a maximum value of 1.4 μm in a GaAsBi/GaAs material system. The lasing wavelength spans about 130 nm by adjusting the disk diameter, covering almost the entire O band. The ultrasmall GaAsBi disk lasers may have great potential for highly dense on-chip integration with large tunability in the O band. © 2019 Chinese Laser Press.
Författare
Xiu Liu
The Chinese University of Hong Kong, Shenzhen
L Wang
Chinese Academy of Sciences
Xuan Fang
The Chinese University of Hong Kong, Shenzhen
Harbin Normal University
Taojie Zhou
The Chinese University of Hong Kong, Shenzhen
Guohong Xiang
The Chinese University of Hong Kong, Shenzhen
Boyuan Xiang
The Chinese University of Hong Kong, Shenzhen
Xueqing Chen
The Chinese University of Hong Kong, Shenzhen
Suikong Hark
The Chinese University of Hong Kong, Shenzhen
Hao Liang
Chinese Academy of Sciences
Shu Min Wang
Chinese Academy of Sciences
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
Zhaoyu Zhang
The Chinese University of Hong Kong, Shenzhen
Photonics Research
2327-9125 (ISSN)
Vol. 7 5 508-512Ämneskategorier
Atom- och molekylfysik och optik
Nanoteknik
Den kondenserade materiens fysik
DOI
10.1364/PRJ.7.000508