Continuous wave operation of gaasbi microdisk lasers at room temperature with large wavelengths ranging from 1.27 to 1.41 μm
Artikel i vetenskaplig tidskrift, 2019

Submicron-meter size GaAsBi disk resonators were fabricated with the GaAsBi/GaAs single-quantum-well (QW)-structure grown by molecular beam epitaxy. The GaAsBi/GaAs QW revealed very broad photoluminescence signals in the wavelength range of 1100–1400 nm at 300 K. The 750 nm diameter and 220 nm thick disk resonators were optically pumped and exhibited lasing characteristics with continuous wave operation at room temperature. To our knowledge, it is the first demonstration of a lasing wavelength longer than 1.3 μm with a maximum value of 1.4 μm in a GaAsBi/GaAs material system. The lasing wavelength spans about 130 nm by adjusting the disk diameter, covering almost the entire O band. The ultrasmall GaAsBi disk lasers may have great potential for highly dense on-chip integration with large tunability in the O band. © 2019 Chinese Laser Press.

Författare

Xiu Liu

The Chinese University of Hong Kong, Shenzhen

L Wang

Chinese Academy of Sciences

Xuan Fang

The Chinese University of Hong Kong, Shenzhen

Harbin Normal University

Taojie Zhou

The Chinese University of Hong Kong, Shenzhen

Guohong Xiang

The Chinese University of Hong Kong, Shenzhen

Boyuan Xiang

The Chinese University of Hong Kong, Shenzhen

Xueqing Chen

The Chinese University of Hong Kong, Shenzhen

Suikong Hark

The Chinese University of Hong Kong, Shenzhen

Hao Liang

Chinese Academy of Sciences

Shu Min Wang

Chinese Academy of Sciences

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Zhaoyu Zhang

The Chinese University of Hong Kong, Shenzhen

Photonics Research

2327-9125 (ISSN)

Vol. 7 5 508-512

Ämneskategorier

Atom- och molekylfysik och optik

Nanoteknik

Den kondenserade materiens fysik

DOI

10.1364/PRJ.7.000508

Mer information

Senast uppdaterat

2019-05-20