Mobility enhancement in tensile-strained Ge grown on InAlP metamorphic templates
Artikel i vetenskaplig tidskrift, 2014

We investigated the growth of tensile-strained Ge on InAlP metamorphic templates by gas source molecular beam epitaxy. Good control of biaxial tensile strain in the Ge layer was demonstrated in the range of 0.5-2.0% by adjusting the In content of the metamorphic template. It was found that the growth of Ge was layer-by-layer (2D) even under high tensile strain of 2.0%, resulting in a smooth surface with roughness less than 1.5 nm. Hall results showed that the electron mobility of Ge increased monotonically with tensile strain.

beam epitaxya

Gas source molecular

Mobility enhancement

MOSFET

InAlP

Tensile-strained Ge

Författare

K. Wang

Chinese Academy of Sciences

Q. Gong

Chinese Academy of Sciences

H. F. Zhou

Chinese Academy of Sciences

C. Z. Kang

Qufu Normal University

J. Y. Yan

Chinese Academy of Sciences

Q. B. Liu

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Applied Surface Science

0169-4332 (ISSN)

Vol. 291 45-47

Ämneskategorier

Fysik

DOI

10.1016/j.apsusc.2013.10.012

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Senast uppdaterat

2018-05-23