Vibrational properties of epitaxial Bi4Te3 films as studied by Raman spectroscopy
Artikel i vetenskaplig tidskrift, 2015

Bi4Te3, as one of the phases of the binary Bi-Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3 films on Si substrates prepared by molecular beam epitaxy. Raman spectra of Bi4Te3 films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3 films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3 films, it is found that the Raman-active phonon oscillations in Bi4Te3 films exhibit the vibrational properties of those in both Bi and Bi2Te3 films.

Författare

H. Xu

Chinese Academy of Sciences

Yuxin Song

Chinese Academy of Sciences

W. W. Pan

Chinese Academy of Sciences

Q. Chen

Chinese Academy of Sciences

X. Wu

Chinese Academy of Sciences

P. F. Lu

Beijing University of Posts and Telecommunications (BUPT)

Q. Gong

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

AIP Advances

2158-3226 (ISSN)

Vol. 5 087103

Ämneskategorier

Materialteknik

DOI

10.1063/1.4928217