Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb
Artikel i vetenskaplig tidskrift, 2022
Herein, low-temperature and temperature-dependent photoluminescence (PL) measurements are carried out on highly tensile-strained Ge nanostructures embedded in GaSb matrix, and the effects of Ge deposition thickness are clarified. The direct-gap transition-related PL feature is successfully identified in the tensile-strained Ge nanostructures. While typical PL thermal quenching is observed for the tensile-strained Ge- and GaSb-related transitions in the samples with a Ge deposition being thinner than the critical thickness, a negative thermal quenching shows up for the GaSb interband transition in the samples with Ge deposition surpassing the critical thickness at which high-density nanoparticles form to relax the strain. A phenomenological thermal-injection model is established of electrons from the tensile-strained Ge layer to the GaSb matrix, the thermal quenching is accounted for, and a ladder-like function of the strain-relaxed Ge is clarified to favor the electron activation. The understanding of the effects of deposition thickness is helpful for the high-performance Ge-based light source for optoelectronic integration.
Nanostructures
Deposition
Germanium
Photoluminescence
Antimony compounds
Gallium compounds
Quenching
Temperature
Light sources
Författare
Cheng Dou
Chinese Academy of Sciences
University of Shanghai for Science and Technology
X Chen
Chinese Academy of Sciences
Q. Chen
Chinese Academy of Sciences
School of Electrical and Electronic Engineering
Y Song
Chinese Academy of Sciences
Nan Ma
Chinese Academy of Sciences
Liangqing Zhu
Chinese Academy of Sciences
East China Normal University
Chuan Seng Tan
School of Electrical and Electronic Engineering
Li Han
Chinese Academy of Sciences
Dengguang Yu
University of Shanghai for Science and Technology
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
J. Shao
Chinese Academy of Sciences
Physica Status Solidi (B): Basic Research
0370-1972 (ISSN) 1521-3951 (eISSN)
Vol. 259 4 2100418Ämneskategorier
Annan fysik
Annan materialteknik
Den kondenserade materiens fysik
DOI
10.1002/pssb.202100418