Photoluminescence Evolution with Deposition Thickness of Ge Nanostructures Embedded in GaSb
Artikel i vetenskaplig tidskrift, 2022
Herein, low-temperature and temperature-dependent photoluminescence (PL) measurements are carried out on highly tensile-strained Ge nanostructures embedded in GaSb matrix, and the effects of Ge deposition thickness are clarified. The direct-gap transition-related PL feature is successfully identified in the tensile-strained Ge nanostructures. While typical PL thermal quenching is observed for the tensile-strained Ge- and GaSb-related transitions in the samples with a Ge deposition being thinner than the critical thickness, a negative thermal quenching shows up for the GaSb interband transition in the samples with Ge deposition surpassing the critical thickness at which high-density nanoparticles form to relax the strain. A phenomenological thermal-injection model is established of electrons from the tensile-strained Ge layer to the GaSb matrix, the thermal quenching is accounted for, and a ladder-like function of the strain-relaxed Ge is clarified to favor the electron activation. The understanding of the effects of deposition thickness is helpful for the high-performance Ge-based light source for optoelectronic integration.
Light sources
Photoluminescence
Gallium compounds
Germanium
Quenching
Antimony compounds
Nanostructures
Temperature
Deposition
Författare
Cheng Dou
University of Shanghai for Science and Technology
Chinese Academy of Sciences
X Chen
Chinese Academy of Sciences
Q. Chen
Chinese Academy of Sciences
Nanyang Technological University
Y Song
Chinese Academy of Sciences
Nan Ma
Chinese Academy of Sciences
Liangqing Zhu
Chinese Academy of Sciences
East China Normal University
Chuan Seng Tan
Nanyang Technological University
Li Han
Chinese Academy of Sciences
Dengguang Yu
University of Shanghai for Science and Technology
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
J. Shao
Chinese Academy of Sciences
Physica Status Solidi (B): Basic Research
0370-1972 (ISSN) 1521-3951 (eISSN)
Vol. 259 4 2100418Ämneskategorier (SSIF 2011)
Annan fysik
Annan materialteknik
Den kondenserade materiens fysik
DOI
10.1002/pssb.202100418