Investigation of metamorphic InGaAs quantum wells using N-incorporated buffer on GaAs grown by MBE
Artikel i vetenskaplig tidskrift, 2011

Strong enhancement of photoluminescence intensity from InGaAs quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates was demonstrated and investigated. The enhancement of photoluminescence intensity is found to be from both the weak strain effect and the strong lattice hardening effect, indicating blocking effect of threading dislocations due to the N incorporation. Combination of this method with a strain compensated superlattice was proved to be effective in obtaining good quality metamorphic InGaAs quantum wells.

Dislocations

Molecular beam epitaxy

Semiconducting III-V materials

Författare

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Cao Xiaohui

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Zonghe Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Journal of Crystal Growth

0022-0248 (ISSN)

Vol. 323 21-25

Styrkeområden

Informations- och kommunikationsteknik

Materialvetenskap

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1016/j.jcrysgro.2010.12.048