Structural and electronic properties of two-dimensional stanene and graphene heterostructure
Artikel i vetenskaplig tidskrift, 2016

Structural and electronic properties of two-dimensional stanene and graphene heterostructure (Sn/G) are studied by using first-principles calculations. Various supercell models are constructed in order to reduce the strain induced by the lattice mismatch. The results show that stanene interacts overall weakly with graphene via van der Waals (vdW) interactions. Multiple phases of different crystalline orientation of stanene and graphene could coexist at room temperature. Moreover, interlayer interactions in stanene and graphene heterostructure can induce tunable band gaps at stanene’s Dirac point, and weak p-type and n-type doping of stanene and graphene, respectively, generating a small amount of electron transfer from stanene to graphene. Interestingly, for model Sn(7)/G(5), there emerges a band gap about 34 meV overall the band structure, indicating it shows semiconductor feature.

Heterostructure

Stanene

Graphene

Structural properties

First-principles

Författare

L. Wu

Beijing University of Posts and Telecommunications

P. F. Lu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Beijing University of Posts and Telecommunications

Jingyun Bi

Beijing University of Posts and Telecommunications

Chuanghua Yang

Shanxi University

yuxin song

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

P. F. Guan

Beijing Computational Science Research Center

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Nanoscale Research Letters

1931-7573 (ISSN) 1556-276X (eISSN)

Vol. 11 525

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Strömningsmekanik och akustik

DOI

10.1186/s11671-016-1731-z