Influence of bismuth atoms on electron g factor of InGaAs(Bi) quantum wells investigated by magneto photoluminescence
Paper i proceeding, 2017

Författare

Liangqing Zhu

X Chen

yuxin song

Zhen Qi

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Jun Shao

8th International Workshop on Bismuth Containing Semiconductors, Marburg, Germany, July 23-26, 2017

Ämneskategorier

Elektroteknik och elektronik

Mer information

Skapat

2017-10-07