1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy
Artikel i vetenskaplig tidskrift, 2017

As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.

Gainnas

Recombination

Semiconductor-Lasers

laser diodes

quantum well

Gaas1-Xbix

Diodes

molecular beam epitaxy

Wavelength

Temperature-Dependence

uncooled laser

GaAsBi

Band-Gap

Författare

X. Y. Wu

Danmarks Tekniske Universitet (DTU)

Chinese Academy of Sciences

W. W. Pan

Chinese Academy of Sciences

Z. P. Zhang

Chinese Academy of Sciences

ShanghaiTech University

Y. Li

Chinese Academy of Sciences

C. F. Cao

Chinese Academy of Sciences

J. J. Liu

Chinese Academy of Sciences

L. Y. Zhang

Chinese Academy of Sciences

Y. X. Song

Chinese Academy of Sciences

H. Y. Ou

Danmarks Tekniske Universitet (DTU)

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

ACS Photonics

2330-4022 (eISSN)

Vol. 4 6 1322-1326

Ämneskategorier

Telekommunikation

DOI

10.1021/acsphotonics.7b00240