1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy
Artikel i vetenskaplig tidskrift, 2017
As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.
Gainnas
Recombination
Semiconductor-Lasers
laser diodes
quantum well
Gaas1-Xbix
Diodes
molecular beam epitaxy
Wavelength
Temperature-Dependence
uncooled laser
GaAsBi
Band-Gap
Författare
X. Y. Wu
Danmarks Tekniske Universitet (DTU)
Chinese Academy of Sciences
W. W. Pan
Chinese Academy of Sciences
Z. P. Zhang
Chinese Academy of Sciences
ShanghaiTech University
Y. Li
Chinese Academy of Sciences
C. F. Cao
Chinese Academy of Sciences
J. J. Liu
Chinese Academy of Sciences
L. Y. Zhang
Chinese Academy of Sciences
Y. X. Song
Chinese Academy of Sciences
H. Y. Ou
Danmarks Tekniske Universitet (DTU)
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
ACS Photonics
2330-4022 (eISSN)
Vol. 4 6 1322-1326Ämneskategorier
Telekommunikation
DOI
10.1021/acsphotonics.7b00240