1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy
Artikel i vetenskaplig tidskrift, 2017

As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.

Wavelength

Gainnas

Diodes

molecular beam epitaxy

Gaas1-Xbix

uncooled laser

GaAsBi

laser diodes

Semiconductor-Lasers

Recombination

Band-Gap

Temperature-Dependence

quantum well

Författare

X. Y. Wu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

Danmarks Tekniske Universitet (DTU)

W. W. Pan

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

Z. P. Zhang

ShanghaiTech University

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. Li

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

C. F. Cao

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

J. J. Liu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

L. Y. Zhang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Y. X. Song

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

H. Y. Ou

Danmarks Tekniske Universitet (DTU)

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

ACS Photonics

2330-4022 (eISSN)

Vol. 4 1322-1326

Ämneskategorier

Telekommunikation

DOI

10.1021/acsphotonics.7b00240