1.142 mu m GaAsBi/GaAs Quantum Well Lasers Grown by Molecular Beam Epitaxy
Journal article, 2017

As a promising new class of near-infrared light emitters, GaAsBi laser diodes (LDs) are considered to have a high energy efficiency and an insensitive temperature dependence of the band gap. In this paper, we realize the longest ever reported lasing wavelength up to 1.142 mu m at room temperature in GaAsBi0.058/GaAs quantum well LDs grown by molecular beam epitaxy. The output power is up to 127 mW at 300 K under pulsed mode. We also demonstrate continuous wave mode operation up to 273 K for the first time. The temperature coefficient of the GaAsBi/GaAs LD is 0.26 nm/K in the temperature range of 77-350 K, lower than that of both InGaAsP/InP and InGaAs/GaAs LDs. The characteristic temperature is extracted to be 139 K in the temperature range of 77-225 K and decreases to 79 K at 225-350 K.

Gainnas

Recombination

uncooled laser

Gaas1-Xbix

GaAsBi

Wavelength

laser diodes

Diodes

Band-Gap

molecular beam epitaxy

Semiconductor-Lasers

Temperature-Dependence

quantum well

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Published in

ACS Photonics

2330-4022 (eISSN)

Vol. 4 Issue 6 p. 1322-1326

Categorizing

Subject Categories (SSIF 2011)

Atom and Molecular Physics and Optics

Condensed Matter Physics

Identifiers

DOI

10.1021/acsphotonics.7b00240

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4/6/2022 2