Bi-Induced Electron Concentration Enhancement Being Responsible for Photoluminescence Blueshift and Broadening in InAs Films
Artikel i vetenskaplig tidskrift, 2019

Photoluminescence (PL) study is conducted on InAs films molecular beam epitaxially grown on GaAs substrates with different Bi flux levels. A PL peak blueshift accompanied by linewidth broadening is found with the increase of Bi/As flux ratio, in contrast to the common Bi isoelectronic incorporation or surfactant effect. It is, with detailed lineshape analysis and the evidence of PL peak splitting in a magnetic filed, attributed to the electron concentration enhancement induced by Bi flux. The electron concentration in InAs film is evaluated, which is about 5-fold enhanced as Bi/As flux ratio rises up from 0 to 1x10(-3). The temperature dependence of the PL spectrum indicates that the carrier redistribution augments while the carrier-phonon Frohlich scattering weakens in InAs films with high Bi/As flux ratios. These findings reveal a novel Bi effect of electron concentration enhancement, and contribute to the basic knowledge of Bi in III-V semiconductors.


InAs films

As flux ratio

photoluminescence blueshift and broadening

electron concentration enhancement


Xiren Chen

Chinese Academy of Sciences

Huan Zhao Ternehäll

Chalmers, Mikroteknologi och nanovetenskap, Terahertz- och millimetervågsteknik

Xiaoyan Wu

Chinese Academy of Sciences

Shanghai Jiao Tong University

Lijuan Wang

Chinese Academy of Sciences

Liangqing Zhu

Chinese Academy of Sciences

East China Normal University

Yuxin Song

Chinese Academy of Sciences

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Chinese Academy of Sciences

Jun Shao

Chinese Academy of Sciences

Physica Status Solidi (B): Basic Research

0370-1972 (ISSN) 1521-3951 (eISSN)

Vol. 256 5 1800694


Atom- och molekylfysik och optik

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