Bi-Induced Electron Concentration Enhancement Being Responsible for Photoluminescence Blueshift and Broadening in InAs Films
Journal article, 2019
Photoluminescence (PL) study is conducted on InAs films molecular beam epitaxially grown on GaAs substrates with different Bi flux levels. A PL peak blueshift accompanied by linewidth broadening is found with the increase of Bi/As flux ratio, in contrast to the common Bi isoelectronic incorporation or surfactant effect. It is, with detailed lineshape analysis and the evidence of PL peak splitting in a magnetic filed, attributed to the electron concentration enhancement induced by Bi flux. The electron concentration in InAs film is evaluated, which is about 5-fold enhanced as Bi/As flux ratio rises up from 0 to 1x10(-3). The temperature dependence of the PL spectrum indicates that the carrier redistribution augments while the carrier-phonon Frohlich scattering weakens in InAs films with high Bi/As flux ratios. These findings reveal a novel Bi effect of electron concentration enhancement, and contribute to the basic knowledge of Bi in III-V semiconductors.
Bi
InAs films
As flux ratio
photoluminescence blueshift and broadening
electron concentration enhancement
Author
Xiren Chen
Chinese Academy of Sciences
Huan Zhao Ternehäll
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Xiaoyan Wu
Chinese Academy of Sciences
Shanghai Jiao Tong University
Lijuan Wang
Chinese Academy of Sciences
Liangqing Zhu
Chinese Academy of Sciences
East China Normal University
Yuxin Song
Chinese Academy of Sciences
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Chinese Academy of Sciences
Jun Shao
Chinese Academy of Sciences
Physica Status Solidi (B): Basic Research
0370-1972 (ISSN) 1521-3951 (eISSN)
Vol. 256 5 1800694Subject Categories
Atom and Molecular Physics and Optics
Condensed Matter Physics
DOI
10.1002/pssb.201800694