Negative thermal quenching of below-bandgap photoluminescence in InPBi
Artikel i vetenskaplig tidskrift, 2017

This paper reports a temperature-dependent (10-280 K) photoluminescence (PL) study of below-bandgap electron-hole recombinations and anomalous negative thermal quenching of PL intensity in InP1- xBix (x = 0.019 and 0.023). Four PL features are well resolved by curve-fitting of the PL spectra, of which the energies exhibit different temperature dependence. The integral intensities of the two high-energy features diminish monotonically as temperature rises up, while those of the two low-energy features decrease below but increase anomalously above 180 K. A phenomenological model is established that the residual electrons in the final state of the PL transition transfer into nonradiative state via thermal hopping, and the thermal hopping produces in parallel holes in the final state and hence enhances the radiative recombination significantly. A reasonable interpretation of the PL processes in InPBi is achieved, and the activation energies of the PL quenching and thermal hopping are deduced. © 2017 Author(s).

Författare

X Chen

Chinese Academy of Sciences

Xiaoyan Wu

Chinese Academy of Sciences

Li Yue

Chinese Academy of Sciences

Liangqing Zhu

Chinese Academy of Sciences

East China Normal University

Wenwu Pan

Chinese Academy of Sciences

Zhen Qi

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Jun Shao

Chinese Academy of Sciences

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 110 5 051903

Ämneskategorier

Atom- och molekylfysik och optik

Den kondenserade materiens fysik

DOI

10.1063/1.4975586