Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy
Artikel i vetenskaplig tidskrift, 2017
We show the potential of cross-sectional scanning tunneling microscopy to address structural properties of dilute III-V bismides by investigating Bi:InP. Bismuth atoms down to the second monolayer below the {110} InP surfaces, which give rise to three classes of distinct contrast, are identified with the help of density functional theory calculations. Based on this classification, the pair-correlation function is used to quantify the ordering of Bi atoms on the long range. In a complementary short-ranged study, we investigate the Bi ordering at the atomic level. An enhanced tendency for the formation of first-nearest-neighbor Bi pairs is found. In addition, the formation of small Bi clusters is observed whose geometries appear to be related to strong first-nearest-neighbor Bi pairing. We also identify growth related crystal defects, such as In vacancies, P antisites, and Bi antisites.
Författare
C. M. Krammel
Technische Universiteit Eindhoven
M. Roy
University Of Leicester
F. J. Tilley
University Of Leicester
P. A. Maksym
University Of Leicester
L. Y. Zhang
Chinese Academy of Sciences
P. Wang
Chinese Academy of Sciences
K. Wang
Chinese Academy of Sciences
Y. Y. Li
Chinese Academy of Sciences
Shu Min Wang
Chinese Academy of Sciences
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
P. M. Koenraad
Technische Universiteit Eindhoven
Physical Review Materials
24759953 (eISSN)
Vol. 1 3 034606Ämneskategorier
Oorganisk kemi
Teoretisk kemi
Den kondenserade materiens fysik
Styrkeområden
Building Futures (2010-2018)
DOI
10.1103/PhysRevMaterials.1.034606