Incorporation of Bi atoms in InP studied at the atomic scale by cross-sectional scanning tunneling microscopy
Journal article, 2017
We show the potential of cross-sectional scanning tunneling microscopy to address structural properties of dilute III-V bismides by investigating Bi:InP. Bismuth atoms down to the second monolayer below the {110} InP surfaces, which give rise to three classes of distinct contrast, are identified with the help of density functional theory calculations. Based on this classification, the pair-correlation function is used to quantify the ordering of Bi atoms on the long range. In a complementary short-ranged study, we investigate the Bi ordering at the atomic level. An enhanced tendency for the formation of first-nearest-neighbor Bi pairs is found. In addition, the formation of small Bi clusters is observed whose geometries appear to be related to strong first-nearest-neighbor Bi pairing. We also identify growth related crystal defects, such as In vacancies, P antisites, and Bi antisites.
Author
C. M. Krammel
Eindhoven University of Technology
M. Roy
University Of Leicester
F. J. Tilley
University Of Leicester
P. A. Maksym
University Of Leicester
L. Y. Zhang
Chinese Academy of Sciences
P. Wang
Chinese Academy of Sciences
K. Wang
Chinese Academy of Sciences
Y. Y. Li
Chinese Academy of Sciences
Shu Min Wang
Chinese Academy of Sciences
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
P. M. Koenraad
Eindhoven University of Technology
Physical Review Materials
24759953 (eISSN)
Vol. 1 3 034606Subject Categories
Inorganic Chemistry
Theoretical Chemistry
Condensed Matter Physics
Areas of Advance
Building Futures (2010-2018)
DOI
10.1103/PhysRevMaterials.1.034606