Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1-xBix dilute bismide with x <= 0.034
Artikel i vetenskaplig tidskrift, 2014

Contactless electroreflectance is applied to study the band gap (E-0) and spin-orbit splitting (Delta(SO)) in InP1-xBix alloys with 0 < x <= 0.034. The E-0 transition shifts to longer wavelengths very significantly (-83 meV/% Bi), while the E0 + Delta(SO) transition shifts very weakly (-13 meV/% Bi) with the rise of Bi concentration. These changes in energies of optical transitions are discussed in the context of the valence band anticrossing model and ab initio calculations. Shifts of E-0 and E-0 + Delta(SO) transitions, obtained within ab-initio calculations, are -106 and -20 meV per % Bi, respectively, which is in a good agreement with experimental results.

Författare

J. Kopaczek

Wrocław University of Science and Technology

R Kudrawiec

Wrocław University of Science and Technology

M. P. Polak

Wrocław University of Science and Technology

P. Scharoch

Wrocław University of Science and Technology

M. Birkett

University of Liverpool

T. D. Veal

University of Liverpool

K. Wang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Yi Gu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Q. Gong

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 105 222104

Ämneskategorier

Fysik

DOI

10.1063/1.4903179