Enhancement of optical quality in metamorphic quantum wells using dilute nitride buffers
Artikel i vetenskaplig tidskrift, 2010

Strong enhancement of optical quality in quantum wells by incorporating nitrogen in metamorphic InGaAs buffers grown on GaAs substrates is demonstrated. This has resulted in 3.7 or 5.4 times enhancement of photoluminescence intensity from the metamorphic quantum wells when using dilute nitride superlattice alone or adding nitrogen in a strain compensated GaAs/In0.3Al0.7As superlattice, respectively. This study shows great potentials by incorporating N in metamorphic buffers to further improve the quality of metamorphic optoelectronic devices.

dislocation

metamorhpic

MBE

dilute nitride

Författare

Yuxin Song

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Zonghe Lai

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Mahdad Sadeghi

Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 97 9 091903- 091903

Ämneskategorier

Fysik

Annan materialteknik

DOI

10.1063/1.3483839

Mer information

Skapat

2017-10-07