Bi-induced highly n-type carbon-doped InGaAsBi films grown by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2018

Carbon-doped InGaAsBi films on InP/Fe (100) substrates have been grown by molecular beam epitaxy (MBE). It has been found that Bismuth incorporation induces extremely high n-type carbon-doped InGaAsBi films, and its electron concentration increases linearly up to 10(21) cm(-3) (highest reported to date for n-type III-V semiconductor materials) with increased CBr4 supply pressure, implying InGaAsBi to be a prospective ohmic contact material for InP-based terahertz transistors. It also has been proved by secondary ion mass spectroscopy that the alloy composition of carbon-doped InGaAsBi is altered by the preferential etching effect of CBr4, but the etching effect on the Bi content is negligible. ERNATHY CR, 1995, APPLIED PHYSICS LETTERS, V66, P1632


Shuxing Zhou

Likun Ai

Ming Qi

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Anhuai Xu

Qi Guo

Journal of Materials Science

0022-2461 (ISSN) 1573-4803 (eISSN)

Vol. 53 5 3537-3543


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