InAs triangular quantum wells grown on InP/SiO2/Si heterogeneous substrate for mid-infrared emission
Artikel i vetenskaplig tidskrift, 2021

The properties of InAs/In0.53Ga0.37As triangular quantum wells (QWs) grown on an InP/SiO2/Si integrated substrate by ion-slicing technology are investigated. The material structure and growth quality are characterized by the X-ray diffraction (XRD) and transmission electron microscope measurements. The photoluminescence (PL) spectra at various temperatures are also analyzed. The PL peak wavelengths red-shift from 1.94 to 2.13 μm with the increase of temperature from 12.4 to 300 K. The experimental results of the QWs on InP/SiO2/Si substrate are found to be comparable with the performance of the same QWs grown on an InP substrate. The results are promising for future integration of Si with InP-based optical devices for the applications of light emission in mid-infrared wavelength range.

InP substrate

Si substrate

Wafer bonding

InAs triangular quantum wells

Mid-infrared emission

Författare

Zhejing Jiao

Shanghai University of Electric Power

Weiguo Huang

Chinese Academy of Sciences

Bowen Liu

Chinese Academy of Sciences

Jiajie Lin

Chinese Academy of Sciences

Tiangui You

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Q Gong

Chinese Academy of Sciences

Yi Gu

Chinese Academy of Sciences

Xin Ou

Chinese Academy of Sciences

Xue Li

Chinese Academy of Sciences

Materials Science in Semiconductor Processing

1369-8001 (ISSN)

Vol. 136 106163

Ämneskategorier

Atom- och molekylfysik och optik

Annan fysik

Den kondenserade materiens fysik

DOI

10.1016/j.mssp.2021.106163

Mer information

Senast uppdaterat

2021-09-22