Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
Artikel i vetenskaplig tidskrift, 2016

InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface.

MBE

Quantum dot

Thermal stability

InAs

GaAsBi

Författare

P. Wang

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

W. W. Pan

Chinese Academy of Sciences

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

X. Y. Wu

Chinese Academy of Sciences

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

J. J. Liu

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Chinese Academy of Sciences

C. F. Cao

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Q. Gong

Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences

Nanoscale Research Letters

1931-7573 (ISSN) 1556-276X (eISSN)

Vol. 11 280

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1186/s11671-016-1470-1