Structural property study for GeSn thin films
Artikel i vetenskaplig tidskrift, 2020

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. hreading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

Structural property




Liyao Zhang

University of Shanghai for Science and Technology

Y Song

Chinese Academy of Sciences

Nils von den Driesch

Forschungszentrum Jülich

RWTH Aachen University

Z. Zhang

Chinese Academy of Sciences

Dan Buca

Forschungszentrum Jülich

Detlev Grützmacher

Forschungszentrum Jülich

RWTH Aachen University

Shu Min Wang

Chinese Academy of Sciences

Chalmers, Mikroteknologi och nanovetenskap, Fotonik


1996-1944 (ISSN)

Vol. 13 16 3645


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