Electrically pumped GaAsBi laser diodes
Paper i proceeding, 2017

In this paper, we present electrically pumped GaAsBi quantum well (QW) laser diodes (LDs) grown by molecular beam epitaxy. The LDs reveal a record long lasing wavelength of 1.14 μm at 300 K and can be operated under CW excitation up to 273 K. They also show high performance with an internal quantum efficiency of 86% and an internal optical loss of 10 cm-1. The characteristic temperature is 79 K in the temperature range of 225-350 K and the temperature coefficient of the lasing wavelength is 0.26 nm/K at 77 - 350 K, much smaller than 0.35 - 0.40 nm/K for InGaAs and InGaAsP QW LDs. These results suggest that GaAsBi LDs are attractive candidates for uncooled near infrared lasers on GaAs.


Shu Min Wang

Chalmers, Mikroteknologi och nanovetenskap, Fotonik

Xiaoyan Wu

Chinese Academy of Sciences

Juanjuan Liu

Chinese Academy of Sciences

Wenwu Pan

Chinese Academy of Sciences

Chunfang Cao

Chinese Academy of Sciences

Liyao Zhang

Chinese Academy of Sciences

yuxin song

Chinese Academy of Sciences

Yaoyao Li

Chinese Academy of Sciences

International Conference on Transparent Optical Networks

21627339 (eISSN)

978-1-5386-0858-6 (ISBN)


Elektroteknik och elektronik





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